电子工程系

Department of Electronic Engineering

 

郝智彪 博士,教授

通讯地址:北京市海淀区清华大学电子工程系 100084
办公室位置:电子工程馆2-305
电话:+86-10-6279-8240,传真:+86-10-6278-4900
电子邮箱:zbhao@tsinghua.edu.cn

教育背景

1996年9月~2001年11月,清华大学电子工程系物理电子学专业,工学博士
1991年9月~1996年7月, 清华大学电子工程系物理电子与光电子技术专业,学士

工作履历

2001年11月至今,清华大学电子工程系教师
2006~2007 美国加州大学洛杉矶分校访问学者

讲授课程:
本科课程:微波与光波技术基础
研究生课程:低维半导体量子器件基础

学术兼职

中国电子学会高级会员

研究领域

微纳结构光电子器件
新型量子结构器件
宽禁带半导体器件
III - V族化合物半导体的外延生长

近期承担的主要在研课题:
国家“973”计划课题,“新型量子级联探测材料及原理器件”
国家“863”计划课题,“探测器关键技术”
国家自然科学基金面重大国际合作研究项目,“GaN 基量子点材料的外延生长和物理特性研究及其器件应用”
国家自然科学基金面上项目,“面向固态量子信息器件的可控半导体量子点制备方法”

研究概况

研究量子信息技术关键器件,特别是基于半导体量子点和光子晶体微腔的单光子源,研究微腔中的动力学物理问题,发展位置及发光波长可控的量子点制备技术和高精度光子晶体微纳加工技术。

研究基于低维半导体量子结构的新型光电子器件及应用技术,特别是极微弱光探测器,包括材料结构和器件结构设计、量子结构中载流子输运特性、器件制作工艺和评测技术。

研究半导体材料的分子束外延,目前重点氮化物半导体薄膜、纳米线、量子点等材料的外延生长。

奖励与荣誉

2010年广东省科技进步一等奖
2003年山东省科技进步一等奖
2001年中国电子学会最佳论文奖
2005年清华大学“优秀共产党员”
2005年清华大学“研究生良师益友”

学术成果

共发表学术论文100余篇,其中SCI收录期刊论文60余篇。

代表性论文:
[1] Yulong Hu, Zhibiao Hao, Wang Lai, Chong Geng, Yi Luo and Qingfeng Yan. Nano-fabrication and related optical properties of InGaN/GaN nanopillars. Nanotechnology, 26: 075302,  2015.
[2] J. B. Kang, Z. B. Hao, L. Wang, Z. L. Liu, Y. Luo, L. Wang, J. Wang, B. Xiong, C. Z. Sun, Y. J. Han, H. T. Li, L. Wang, W. X. Wang, and H. Chen, “Studies on carrier blocking structures for up-conversion infrared photodetectors,” Acta Phys. Sin., vol. 64, no. 17, pp. 178502, 2015.
[3] Di Yang, Lai Wang, Wen-Bin Lv, Zhi-Biao Hao and Yi Luo. Growth and characterization of phosphor-free white light-emitting diodes based on InGaN blue quantum wells and green–yellow quantum dots. Superlattices and Microstructures, 82: 26-32, 2015.
[4] Lang Niu, Zhibiao Hao, Yanxiong E, Jiannan Hu, Lai Wang and Yi Luo. MBE-grown AlN-on-Si with improved crystalline quality by using silicon-on-insulator substrates. APPLIED PHYSICS EXPRESS, 7: 065505, 2014.
[5] Lv Wenbin, Wang Lai, Wang Lei, Xing Yuchen, Yang Di, Hao Zhibiao and Luo Yi. InGaN quantum dot green light-emitting diodes with negligible blue shift of electroluminescence peak wavelength. APPLIED PHYSICS EXPRESS, 7(2): 025203, 2014.
[6] Jiannan Hu, Zhibiao Hao,Lang Niu, Yanxiong E, Lai Wang and Yi Luo. Atomically smooth and homogeneously N-polar AlN film grown on silicon by alumination of Si3N4. Appl. Phys. Lett. 102(14): 141913, 2013.
[7] Wang Jiaxing, Wang Lai, Wang Lei, Hao Zhibiao, Luo Yi, Dempewolf Anja, Muller Mathias, Bertram Frank, Christen Juergen. An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes . Journal of Applied Physics, 112(2):  023107,  2012.
[8] Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai and Luo Yi. Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy. Acta Phys. Sin. 61(23):  237804, 2012.
[9] Jianbin Kang, Zhibiao Hao, Lei Wang, Yi Luo. Observing Quantum Cascade Electron Transportation by PL Measurement. International Nano-Optoelectronics Workshop, 2012.
[10] Lang Niu, Zhibiao Hao, Jiannan Hu, Yibin Hu, Lai Wang and Yi Luo. Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control. Nanoscale Research Letters, 6: 611, 2011.
[11] Zhao Wei, Wang Lai, Wang Jiaxing, Hao Zhibiao, Luo Yi. Edge dislocation induced self-assembly of InGaN nano-flower on GaN by metal organic vapor phase epitaxy. Journal of Applied Physics, 110(1): 014311, 2011.
[12] Wenjuan Fan, Zhibiao Hao, Erik Stock, Jianbin Kang, Yi Luo and Dieter Bimberg. Comparision between Two Types of Photonic-crystal Cavities for Single Photon Emitters. Semiconductor Science and Technology, vol. 26, no. 1, pp. 014014, 2011.
[13] Zhibiao Hao, Lang Niu, Jiannan Hu, Yibin Hu and Yi Luo. Tuning Emission Wavelength of MBE-Grown GaN/AlN QD by Polarization Control. 9th Internatinal Conference on Nitride Semiconductors, ICNS-9, Glasgow, UK, 2011.
[14] Wenjuan Fan, Zhibiao Hao, Zheng Li, Yunsong Zhao, Yi Luo. Influence of Fabrication Error on the Characteristics of a 2D Photonic-Crystal Cavity. IEEE Journal of Lightwave Technology, vol. 28, No. 10, pp. 1455-1458, 2010.
[15] Jiaxing Wang, Lai Wang, Wei Zhao, Zhibiao Hao and Yi Luo. Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization. Appl. Phys. Lett. 97: 201112, 2010
[16] Ren Fan, Hao Zhi-Biao, Wang Lei, Wang Lai, Li Hong-Tao and Luo Yi. Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors, Chinese Physics B, 19(1): 017306, 2010.
[17] Zhang Chen, Hao Zhi-Biao, Ren Fan, Hu Jian-Nan and Luo Yi. Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy. Chin. Phys. lett. 27(5): 058101, 2010.
[18] Zuoming Zhao, Kameshwar Yadavalli, Zhibiao Hao, Kang L Wang. Direct integration of III-V compound semiconductor nanostructures on silicon by selective epitaxy. Nanotechnology, 20(3): 035304, 2009.
[19] Zuoming Zhao, Zhibiao Hao, Kameshwar Yadavalli, Kang L. Wang and Ajey P. Jacob. Optical properties of InAs quantum dots grown on patterned Si with a thin GaAs buffer layer. Appl. Phys. Lett. 92(8): 083111, 2008.
[20] Yu. Ben, Zhibiao Hao, Changzheng Sun, Fan Ren and Yi Luo. Photon emission properties of quantum-dot-based single photon sources under different excitations. Appl. Phys. B,81(1): 39, 2005.
[21] Shuo Han, Zhibiao Hao, Jian Wang and Yi Luo. Controllable two-dimensional photonic crystal patterns fabricated by nanosphere lithography. J. Vac. Sci. Technol. B, 23(4): 1585, 2005.
[22] Zhibiao Hao, Shuo Han, Fan Ren, Bing Xiong, Changzheng Sun and Yi Luo. Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma. Jpn. J. Appl. Phys. Part 1, 43(12): 8304, 2004.
[23] Yu Ben, Zhibiao Hao, Changzheng Sun, Fan Ren, Ning Tan and Yi Luo. Three-dimensional photonic-crystal cavity with an embedded quantum dot as a nonclassical light emitter. Optics Express, 12(21): 5146, 2004.
[24] Zhibiao Hao, Zaiyuan Ren, Bing Xiong, Wenping Guo and Yi Luo. InAsyP1-y / InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4. Journal of Crystal Growth, 234(2-3): 364, 2002.
[25] Zhibiao Hao, Zaiyuan Ren, Wei He and Yi Luo. 1.55 ?m InAsP / InGaAsP strained multiple quantum well laser diodes grown by solid source molecular beam epitaxy. Japanese Journal of Applied Physics, 41( 2A): 754, 2002.
[26] Zhibiao Hao, Zaiyuan Ren, Wenping Guo and Yi Luo. Studies on incorporation of As2 and As4 in III-V compound semiconductors with two group V elements grown by molecular beam epitaxy. Journal of Crystal Growth, 224(3-4): 224, 2001.