电子工程系

Department of Electronic Engineering 

 

Zhibiao HAO, Ph.D.  Professor

Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Tel: +86-10-62798240
Fax: +86-10-62784900
E-mail: zbhao@tsinghua.edu.cn

Education background

Ph.D., Electronic Engineering, Nov. 2001Tsinghua University, Beijing, China
Bachelor, Electronic Engineering, July 1996Tsinghua University, Beijing, China

Experience

01/2012-present, Professor, Dept. of Electronic Engineering, Tsinghua Univ.
12/2004-12/2011, Associate Professor, Dept. of Electronic Engineering, Tsinghua Univ.
09/2006-09/2007, Visiting Scholar, Dept. of Electrical Engineering, University of California, Los Angeles.
11/2001-12/2004,  Assistant Professor, Dept. of Electronic Engineering,Tsinghua Univ.

Concurrent Academic

Senior Member, Chinese Institute of Electronics

Areas of Research Interests/ Research Projects

ResearchInterests:
Nanostructure optoelectronic devices
Novel quantum structure and devices
Wide band-gap semiconductor devices
Epitaxial growth of III-V compound semiconductors

Research projects:
National Basic Research Program of China ("973" Project) “Novel quantum cascade detection materials and devices”
High Technology Research and Development Program of China ("863" Project)“Crucial issues of photo-detectors"
Major Project of National Natural Science Foundation of China “Investigation on the growth and physical properties of GaN-based quantum dots”
National Natural Science Foundation of China “Controllable formation of semiconductor quantum dots for solid state quantum information devices”

Research Status

For the key component of quantum information technology, we investigate the fundamental issues of single photon source based on quantum dot coupled with photonic crystal micro-cavity structure, including the mode characteristics of photonic crystal micro-cavity, the fabrication techniques and controllable formation of quantum dots.

For novel optoelectronic devices and the applications, especially photo detectors based on low-dimensional semiconductor quantum structures, we investigate the design of material structures, carrier transportation properties, devices fabrication and measurement.

We investigate the molecular beam epitaxy (MBE) of InGaAsP and AlGaInN semiconductors. High-quality Nitride films, nanowires and quantum dots have been obtained. We firstly realized the room-temperature operation of 1.55 micron InAsP multiple quantum well laser based on solid source MBE.

Honors And Awards

First Class Award of Achievement in Science and Technology, GuangDong Province, 2010
First Class Award of Achievement in Science and Technology, ShanDong Province, 2003
Best Paper Award of Chinese Institute of Electronics, 2001

Academic Achievement

More than 100 published papers, including over 60 SCI papers.
[1] Yulong Hu, Zhibiao Hao, Wang Lai, Chong Geng, Yi Luo and Qingfeng Yan. Nano-fabrication and related optical properties of InGaN/GaN nanopillars. Nanotechnology, 26: 075302,  2015.
[2] J. B. Kang, Z. B. Hao, L. Wang, Z. L. Liu, Y. Luo, L. Wang, J. Wang, B. Xiong, C. Z. Sun, Y. J. Han, H. T. Li, L. Wang, W. X. Wang, and H. Chen, “Studies on carrier blocking structures for up-conversion infrared photodetectors,” Acta Phys. Sin., vol. 64, no. 17, pp. 178502, 2015.
[3] Di Yang, Lai Wang, Wen-Bin Lv, Zhi-Biao Hao and Yi Luo. Growth and characterization of phosphor-free white light-emitting diodes based on InGaN blue quantum wells and green–yellow quantum dots. Superlattices and Microstructures, 82: 26-32, 2015.
[4] Lang Niu, Zhibiao Hao, Yanxiong E, Jiannan Hu, Lai Wang and Yi Luo. MBE-grown AlN-on-Si with improved crystalline quality by using silicon-on-insulator substrates. APPLIED PHYSICS EXPRESS, 7: 065505, 2014.
[5] Lv Wenbin, Wang Lai, Wang Lei, Xing Yuchen, Yang Di, Hao Zhibiao and Luo Yi. InGaN quantum dot green light-emitting diodes with negligible blue shift of electroluminescence peak wavelength. APPLIED PHYSICS EXPRESS, 7(2): 025203, 2014.
[6] Jiannan Hu, Zhibiao Hao,Lang Niu, Yanxiong E, Lai Wang and Yi Luo. Atomically smooth and homogeneously N-polar AlN film grown on silicon by alumination of Si3N4. Appl. Phys. Lett. 102(14): 141913, 2013.
[7] Wang Jiaxing, Wang Lai, Wang Lei, Hao Zhibiao, Luo Yi, Dempewolf Anja, Muller Mathias, Bertram Frank, Christen Juergen. An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes . Journal of Applied Physics, 112(2):  023107,  2012.
[8] Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai and Luo Yi. Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy. Acta Phys. Sin. 61(23):  237804, 2012.
[9] Jianbin Kang, Zhibiao Hao, Lei Wang, Yi Luo. Observing Quantum Cascade Electron Transportation by PL Measurement. International Nano-Optoelectronics Workshop, 2012.
[10] Lang Niu, Zhibiao Hao, Jiannan Hu, Yibin Hu, Lai Wang and Yi Luo. Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control. Nanoscale Research Letters, 6: 611, 2011.
[11] Zhao Wei, Wang Lai, Wang Jiaxing, Hao Zhibiao, Luo Yi. Edge dislocation induced self-assembly of InGaN nano-flower on GaN by metal organic vapor phase epitaxy. Journal of Applied Physics, 110(1): 014311, 2011.
[12] Wenjuan Fan, Zhibiao Hao, Erik Stock, Jianbin Kang, Yi Luo and Dieter Bimberg. Comparision between Two Types of Photonic-crystal Cavities for Single Photon Emitters. Semiconductor Science and Technology, vol. 26, no. 1, pp. 014014, 2011.
[13] Zhibiao Hao, Lang Niu, Jiannan Hu, Yibin Hu and Yi Luo. Tuning Emission Wavelength of MBE-Grown GaN/AlN QD by Polarization Control. 9th Internatinal Conference on Nitride Semiconductors, ICNS-9, Glasgow, UK, 2011.
[14] Wenjuan Fan, Zhibiao Hao, Zheng Li, Yunsong Zhao, Yi Luo. Influence of Fabrication Error on the Characteristics of a 2D Photonic-Crystal Cavity. IEEE Journal of Lightwave Technology, vol. 28, No. 10, pp. 1455-1458, 2010.
[15] Jiaxing Wang, Lai Wang, Wei Zhao, Zhibiao Hao and Yi Luo. Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization. Appl. Phys. Lett. 97: 201112, 2010
[16] Ren Fan, Hao Zhi-Biao, Wang Lei, Wang Lai, Li Hong-Tao and Luo Yi. Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors, Chinese Physics B, 19(1): 017306, 2010.
[17] Zhang Chen, Hao Zhi-Biao, Ren Fan, Hu Jian-Nan and Luo Yi. Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy. Chin. Phys. lett. 27(5): 058101, 2010.
[18] Zuoming Zhao, Kameshwar Yadavalli, Zhibiao Hao, Kang L Wang. Direct integration of III-V compound semiconductor nanostructures on silicon by selective epitaxy. Nanotechnology, 20(3): 035304, 2009.
[19] Zuoming Zhao, Zhibiao Hao, Kameshwar Yadavalli, Kang L. Wang and Ajey P. Jacob. Optical properties of InAs quantum dots grown on patterned Si with a thin GaAs buffer layer. Appl. Phys. Lett. 92(8): 083111, 2008.
[20] Yu. Ben, Zhibiao Hao, Changzheng Sun, Fan Ren and Yi Luo. Photon emission properties of quantum-dot-based single photon sources under different excitations. Appl. Phys. B,81(1): 39, 2005.
[21] Shuo Han, Zhibiao Hao, Jian Wang and Yi Luo. Controllable two-dimensional photonic crystal patterns fabricated by nanosphere lithography. J. Vac. Sci. Technol. B, 23(4): 1585, 2005.
[22] Zhibiao Hao, Shuo Han, Fan Ren, Bing Xiong, Changzheng Sun and Yi Luo. Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma. Jpn. J. Appl. Phys. Part 1, 43(12): 8304, 2004.
[23] Yu Ben, Zhibiao Hao, Changzheng Sun, Fan Ren, Ning Tan and Yi Luo. Three-dimensional photonic-crystal cavity with an embedded quantum dot as a nonclassical light emitter. Optics Express, 12(21): 5146, 2004.
[24] Zhibiao Hao, Zaiyuan Ren, Bing Xiong, Wenping Guo and Yi Luo. InAsyP1-y / InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4. Journal of Crystal Growth, 234(2-3): 364, 2002.
[25] Zhibiao Hao, Zaiyuan Ren, Wei He and Yi Luo. 1.55 ?m InAsP / InGaAsP strained multiple quantum well laser diodes grown by solid source molecular beam epitaxy. Japanese Journal of Applied Physics, 41( 2A): 754, 2002.
[26] Zhibiao Hao, Zaiyuan Ren, Wenping Guo and Yi Luo. Studies on incorporation of As2 and As4 in III-V compound semiconductors with two group V elements grown by molecular beam epitaxy. Journal of Crystal Growth, 224(3-4): 224, 2001.