电子工程系

Department of Electronic Engineering 

Yidong HUANG, Ph.D. Professor

Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

Tel: +86-10-62797396

Fax: +86-10-62770317

E-mail: yidonghuang@tsinghua.edu.cn

Lab: http://www.nano-oelab.net

 

Education background

Yidong Huang was born in Beijing, China. She received the B.S. and Ph.D. degrees in optoelectronics from Tsinghua University, Beijing, China, in 1988 and 1994, respectively. From 1991 to 1993, she was with Arai Laboratories, Tokyo Institute of Technology, Japan, on leave from the Tsinghua University. Her Ph.D. dissertation was mainly concerned with strained quantum well lasers and laser amplifiers.

 

Experience

In 1994, she joined the Photonic and Wireless Devices Research Laboratories, NEC Corporation, where she was engaged in the research on semiconductor laser diodes for optical-fiber communication and became an assistant manager in 1998. She received “Merit Award” and “Contribution Award” from NEC Corporation in 1997 and 2003, respectively. She joined the Department of Electronics Engineering, Tsinghua University in 2003, as a professor, and be appointed by the Changjiang Project and the National Talents Engineering in 2005 and  2007, respectively. She was Vice Chairman of the Department from 2007-2012 and has been the Chairman of the Department from 2013. She is presently engaged in research on nano-structure optoelectronics.

Professor Huang authored/co-authored more than 300 journal and conference papers. 

Teaching Course:

Solid-State Physics (2011-Now)
Quantum Electronics ( 2003-Now)
Nano-structure Optoelectronics  2004-2009)

 

Concurrent Academic

Senior member of the IEEE.

 

Social service

CONFERENCE

Session Chairman, Optoelectronic and Communication Conference (OECC), Seoul, Korea, July 4-8, 2005.

Technical Program Committee, Joint International Conference on Optical Internet and Next Generation Network (COIN-NGNCON

2006), Korea, July 2-6, 2006.

Program Committee, International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, September 23-26, 2008.

Subcommittee (SC) Co-Chair, Asia Communications and Photonics (APC), Shanghai, China, Dec 8-12, 2010.

Technical Program Committee, International Semiconductor Laser Conference (ISLC), 2006.

Co-chair,Optoelectronic Materials and Devices, Asia Communications and Photonics Conference and Exhibition(ACP)  2011.

Technical Program Committee, Optoelectronic and Communication Conference (OECC),  2014.    

Co-Chair, International Conference on information Optics and Photonics (CIOP), 2015.

Technical Program Committee, Optoelectronic and Communication Conference (OECC),  2016.

ACADEMIC ORGANIZATION

Senior member of IEEE

 

 

Areas of Research Interests/ Research Projects

Photonic Crystal

Silicon Photonics

Surface Plasmon Polariton

Quantum Electronics

 

Research Status

Representative Result 1-
Compact and Broadband Optical Switch based on Photonic Crystal

Optical switch is an essential element in network-on-chip (NoC), which performs the key role of “directing traffic” as routing the optical messages from the transmitting core to the receiving core. For such applications, optical switches are required to be compact, broadband, and low power consumption. Up to now, optical switch with structure of microring resonator has been demonstrated with compact footprint and low power consumption, but it suffers from very narrow operating bandwidth.

In our work, a new principle based on the coupling between defect modes in photonic crystal waveguide (PCW) is proposed to realize compact optical switch. Based on this principle, the mode coupling strength in photonic band gap can be flexibly controlled by proper designing the structure of PCW. The schematic of our proposed device is shown in Fig. (a). There is a PCW fabricated on silicon on insulator substrate with an integrated titanium/aluminum microheater on top. Switching functionality with bandwidth up to 24 nm and extinction ratio in excess of 15 dB over the entire bandwidth is achieved by the PCW with footprint of only 8?m×17.6?m, which is the most compact broadband optical switch up to now. The measured switching performance is presented in Fig. (b). It can be seen that in the wavelength range of 1557~1581 nm for our fabricated sample, the switch is at on-state without heating power and turned to off-state with applied power of 154.1mW. Therefore, the corresponded switching power consumption per bit
is only 0.26 pJ/bit. Furthermore, the switching speed is measured by alternating current modulation. Figure (c) shows the measured optical response at the output port of the optical switch driven by 1 kHz (top) and 5 kHz (bottom) rectangular wave signals. From the multiple-sampling measurements, the rise and fall time for this thermo-optic switch is 11.0±3.0 μs and 40.3±5.3 μs, which indicates a response bandwidth of about 15 kHz.

Related studies are published on Applied Physics Letters, 2012, 101: 151110,Applied Physics Letters, 2012, 100: 201102. APL reviewer for this work favorably commented that “PCW experimental research is challenging and I would like to compliment the authors for their innovative work.” 


Fig. (a) Schematic diagram of the proposed thermo-optic switch; (b) measured transmission spectra under different applied heating powers; (c) measured optical response of the output port of the optical switch.


Representative Result 2-
High-aspect-ratio ICP Etching for InGaAsP Heterostructure

Active photonic crystal waveguide (PCW) using III-V materials can compensate for the loss during light transmission, flexibly adjust the light-matter interaction, and thus show great potentials in compact and ultra-low-power functional optical devices such as light sources, optical amplifiers as well as optical delay lines. However, due to the low index-contract, the confined mode in InP/InGaAsP/InP heterostructure extends larger than 2μm. In order to reduce the out-of-plane leakage, InP based micro-/nano-structures with feature size of ~100nm must be etched deeply, namely high-aspect-ratio etching technology is essential. Obviously, for deep etching, the smaller the openings size is, the more difficult the reaction species escape from the holes, accordingly bringing out a much bigger challenge.

In these regards, we devote to exploring a high-aspect-ratio etching technology with high-quality for ultra-small feature size patterns in InGaAsP substrate. . Using inductively coupled plasma (ICP) dry etching technique, various process parameters on the etch results are studied. We choose SiCl4 together with Cl2 in our process which can take advantage of the heavy ionic SiCl4 particles by bombarding the reaction particles efficiently and heat the surface by cracking it. Besides this, we also heat the wafer to a temperature of 230 oC to strengthen desorption of the reaction products. Using a low pressure of 0.05 Pa, high-aspect-ratio ICP etching of PCW in InGaAsP heterostructure is demonstrated. Figure (a) shows the SEM cut view of the etched heterostructure, which consists of an InGaAsP active layer embedded in InP wafer. It can be seen that etch depth up to 3.5 ?m and 1.8 ?m is achieved for the holes with diameter of 200 nm and slots of ~40 nm, respectively. The latter corresponds to an aspect-ratio as high as 45. This result surpasses the previous highest aspect-ratio of 38, which has been reported by British research group in “J. Vac. Sci. Technol. B 2004,22: 1788” and maintained for nearly 10 years.

To evaluate the etching quality, the transmission performance and the linewidth of micro-photoluminescence (?-PL) of the etched samples are measured and shown in Fig. (b) and (c). Transmission dip about 17 dB is obtained by the PCW with length of only ~17 ?m. In addition, the structure-dependent transmissions show good agreement with the theoretical predictions. To further determine the fabrication quality for active devices, ?-PL measurements of the etched PCWs are performed at room temperature. As seen in Fig. (c), ?-PL linewidth is only 19nm larger than that of the corresponding wafer, which demonstrates the high etching quality of our process.

This research work is published on AIP Advances 3, 022122, 2013. On April 8th, 2013, American scientific media “VerticalNews” reported this research work in the title of "Recent Findings from Tsinghua University Provides New Insights into Nanotechnology". 

Fig. (a) SEM cut view of photonic crystal waveguide and slots with different widths in InP/InGaAsP/InP heterostructure;(b) Measured transmission spectra of W3 PCWs(r/a=0.345)in InP heterostructure with 1.3?m-MQWs; (c) Measured micro-photoluminescence (?-PL) spectra.

Representative Result 3-
Integrated orbital angular momentum encoder/decoder

It is well known that the light beam could carry linear momentum and spin angular momentum (SAM). However, it had not been realized that light beam as well as a single photon can also carry orbital angular momentum (OAM) until 1992, Allen et.al pointed it out. The order of OAM beam is well defined as the azimuthal phase distribution (expil?) within the plane perpendicular to the propagation direction, which also means that the OAM carried by each photon is  . It should be noticed that the order of OAM can an arbitrary integer within -∞~+∞, which is quite different to SAM(-1,0,+1). Meanwhile, the OAM modes with different orders are orthogonal to each other. It indicates that OAM provides a dimension for transmitting and manipulating high capacity information.

Here, OAM beams on chip is proposed for wireless optical interconnects and a full scheme of encoding and decoding is demonstrated with numerical simulation. The proposed structure is shown as follows:

Fig. Schematic setup for OAM encoder/decoder on-chip

For the OAM encoder (layer1), there is one ring cavity, one bus waveguide and eight download units (including one arc waveguide and grating for each). The input light is injected from the input port of bus waveguide. If input light satisfies the resonance of ring cavity, it would be coupled into the ring and downloaded by each of the eight rotationally symmetrical arc waveguides. Finally, the lights propagating in all arc waveguides would be combined and transformed into free space light (or travels in homogenous and isotropic medium) by the ended gratings. Beams with OAM carry quanta of angular momentum that, for a certain frequency, can be encoded on the beam by electro-optic tuning of the mode order in a ring cavity. The decoding is accomplished (on another integrated-optics chip or layer, layer2) by coupling the free-space light into waveguides using gratings, and then coherently superposing the results to recover the signal either using an interferometer or arrayed-waveguide gratings. With proposed structure, beams with OAM order of -3 to 4 is generated and the modes with l=0~3 are utilized to achieve quaternary coding. According to the simulation, the transmitted data rate on chip could be increased twice times. As a result, the power consumption per bit could be reduced to half. Obviously, if higher multi-ary coding is employed, data density could be dramatically increased. Furthermore, it should be mentioned that the proposed structure could be easily applied on the existing optical interconnects architecture and what should do is replacing the intensity modulator with the encoder and adding a decoder before the photodetector. (Optics Express, 20(24), pp. 26986-26995, (2012),CLEO_SI2013:CM3F.8). After this result was published on Optics Express, it was reported as “Newsbreaks” on Laser Focus World (48(12), Dec. 2012)

Recently, a simple on-chip integrated structure is proposed to generate OAM beams, where only silicon waveguides and couplers are involved. The operating principle is based on mode converting and proper controlling the phase shift of second-order propagating mode. The proposed device is very compact with footprint and can be easily fabricated with CMOS technology. Thus, such OAM mode generator is a promising candidate for applications ranging from optical tweezers, optical spanner to optical communications.(IEEEPhotonics Journal, 5(2): 2201206, (2013)).

Representative Result 4-
Micro-ring array assisted MZI silicon modulator

There are two common structures for Si electro-refractive modulator, Mach-Zehnder interferometer (MZI) and resonant cavity. For MZI modulator, the temperature stability is very high but it suffers from the large footprint and high power consumption. On the contrary, the footprint of that based on resonant cavity could be very small since high-Q resonance is utilized to obtain a deep modulation depth and reduce power consumption. However, due to the large thermo-optic coefficient of silicon, resonant electro-optic modulators suffer from high temperature sensitivity.

To achieve both compactness and temperature insensitivity, a silicon modulator with microring array assisted Mach-Zehnder interferometer is experimentally demonstrated on silicon-on-insulator (SOI) wafer through CMOS-compatible processes. The layout is shown as follows:

 

(a)The structure of microring array assisted MZI silicon modulator, (b) scanning electron microscope (SEM) image of the sample after etching and without ion implantation.

The proposed modulator is fabricated on SOI wafer, with a 220 nm-thick top silicon layer and 2 μm-thick buried oxide layer, through the photonics prototyping service of the Institute of Microelectronics (IME) in Singapore. All waveguides are silicon rib waveguides with width of 450 nm, height of 220 nm, and a slab layer with thickness of 60 nm. The arm length of MZI is L = 30 μm and the diameters of three rings are about D = 9.98 μm, 10 μm, and 10.02 μm. The device footprint of the whole modulator is about 600 μm2, which is about one order of magnitude smaller than that of the regular MZI modulator.
According to the measurement, the modulation efficiency is rather high while the measured voltage length product VπL is as low as  6.63 × 10-3V?cm at room temperature. Such value is two or three order of magnitude less than that of the regular MZI modulator (IEEE PTL 2012, 24(4):234-236,OE 2012,(20)6:6163-6169,IEEE JSTQE 2010,(16)1:307-315), and even less than that with photonic crystal waveguide (PCW) (OE 2011, 19(14):13000-13007). The temperature stability of our device is also tested and it possesses pretty good temperature insensitivity within 10 to 70 oC with maximum disparity of 3 dB. Finally, the frequency response is measured, and the 3 dB bandwidth is about 2 GHz. This work has been submitted to IEEE Photonics Technology Letters (Under revision).

Representative Result 5-
Integrated Surface Plasmon Polariton Bio-sensor

Surface plasmon polariton (SPP) plays a critical role in the field of chemical and biological sensing, owing to its significant response to a variation in external refractive index. The conventional prism-based SPP sensors have rather high sensitivity, but their large volume, discrete components, and relative high cost limit their applications for the outdoor or home use. Therefore, the integrated SPP sensor with various structures has been proposed and studied in the recent years. However, these integrated SPP sensors always suffer from much lower sensitivity, especially for ultra-thin layer and small bio-molecules sensing. On the other hand, for outdoor or home use, it is expected to realize the on-chip sensor integrated with light source and detector. Nevertheless, adopting the optical spectrum as sensing measurand may not be the best scheme for on-chip sensor system, since the on-chip spectrometer has complicated structure and much lower resolution compared with the conventional one.

To get rid of above problems, we proposed and demonstrated an integrated SPP sensor based on the vertical hybrid coupling structure comprised of a short range SPP (SRSPP) waveguide and a dielectric waveguide. With the optical power rather than optical spectrum as the detection signal, this integrated sensor is essentially suitable for integrating with light source and detector on one chip.

Figure (a) Schematic structure of the integrated sensor based on the vertical hybrid coupler with SRSPP waveguide (Au strip, yellow) and dielectric waveguide (SiNx strip, gray) embedded in SiO2, (b) The SEM photo of polymer multilayer grown on the gold surface, (c) The measured output power Pout (black rectangles with error-bar) versus the thickness of the detection layer hdet.

It is demonstrated that the output power changes significantly with the refractive index of the detection layer and the minimum detectable refractive index change is as small as 7.3×10?6 RIU. The sensing center could be adjusted in both delicate and coarse range by varying the width of dielectric waveguide and the thickness of SRSPP waveguide, respectively. In addition, owing to the highly bounded mode field of the SRSPP compared with that of general SPP mode, this SRSPP sensor can realize much higher sensitivity for ultra-thin layer detection. The self-assembly method is adopted to obtain the polyelectrolyte layer with controllable thickness and fixed refractive index on the metal surface. The above figure shows the prepared polyelectrolyte multiplayer above the gold film with 13-layer and 4-layer. It is observed that, for thickness change of 1nm, the variation of 0.67dB in output power can be obtained.

Figure (a) Schematic drawing of BPA immunosensor fabrication and the SEM image of the corresponding functional layer, (b) The saturate reaction output power (Pout-sat) labeled with different BPA concentration.

Moreover, to prove the feasibility of the integrated sensor for immunoreaction detection, the integrated coupler sensor is used for detecting bisphenol A, which is an organic compound commonly used as an intermediate in the production of polycarbonate plastics, epoxy coatings, etc. It is demonstrated that the minimum detectable concentration of BPA solution is about 0.1ng/ml, which is much lower than the EU drinking water standard (1ng/ml), and the biosensor can be used for at least nine detection cycles without a significant worsen of sensitivity.

This novel integrated bio-sensor based on the SRSPP mode illustrates rather high sensitivity for small molecules detection. And it is possible to be integrated with the light source and detector on the same chip. This result has been published in Applied Physics Letters 102, 061109 (2013) and Sensors and Actuators B: Chemical, 186, 495 (2013).

Representative Result 6-
Plasmonic enhanced solar cells

By utilizing the Localized Surface Plasmon (LSP) effect of metal nanoparticles (NPs), the incident light can be trapped surrounding the metal NPs, which helps to increase the light absorption of thin film solar cells. While, for the conventional metal nanoparticles, the enhancing spectra with LSP effect can only exist in a limited wavelength range and can not cover the solar spectrum. To solve this problem, an irregular Ag-Au alloy core-shell NP with a Ag2O shell are proposed and realized. By introducing the NPs in dye sensitized solar cells (DSCs), a significant enhancement of the power conversion efficiency (PCE) is observed.

The irregular NPs, so called ‘popcorn’ NPs, have plenty fine structures of different shape, size, and Au/Ag proportion. Various LSP modes in different wavelengths could be excited simultaneously surrounding popcorn NPs, which results in broadband light absorption enhancement. The simulation result in Fig. 1 indicates that different LSP modes in different wavelengths could be excited by different parts of the ‘popcorn’ NP.

Fig. 1  (a) The scheme of popcorn NPs enhanced dye sensitized solar cells, (b) Calculated electromagnetic field on popcorn NPs.

Figure 2(a) shows the scanning electron microscopy (SEM) image of the popcorn NPs synthesized by using chemical method. The NPs are about 150-200nm large in average and coated with a 2-3nm Ag2O layer. Although nanoparticle is different with each other, they all possess several fine structures on their surface. The popcorn NPs in aqueous solution shows a broadband light absorption over 400nm to 800nm, as shown in Fig. 2(b). Further experimental result shows that the photocurrent of the device is substantially boosted when introducing the popcorn NPs into the TiO2 anodes of DSCs, and the PCE is improved from 5.94% to 7.85% with an enhancement of 32%.

Fig.2 (a) Scanning electron microscopy (SEM) image of a popcorn NP, (b) Broadband light absorption of the popcorn NPs in aqueous solution, (c) The photocurrent is substantially boosted when introducing the popcorn NPs into the TiO2 anodes of the DSCs.

The novel popcorn NPs address the issue that the LSP spectra of traditional metal NPs is not wide enough to cover the solar spectrum, which limits the light trapping effect of NPs. With the broadband light absorption of popcorn NPs, the efficiency of DSCs has been improved by 32%. The research result is published on Scientific Reports 3, 2112 (2013).

Representative Result 7-
Heralded single photon source and entangled photon pair sources for quantum engineering

Photons are ideal “flying qubits” . Recently, the quantum information applications based on quantum optics, such as quantum communications, quantum metrology, and linear optics quantum computing, progressed rapidly, showing great potentials in real applications. However, lack of practical quantum light sources is still a big bottle neck to develop quantum engineering technologies based on “flying qubits”. We started the researches of practical quantum light source based on spontaneous four wave mixing (SFWM) in optical fibers and silicon devices since 2008, which are the typical  third order nonlinear waveguides widely used in photonics.

We clarified the trade-off relation between preparation efficiency and g2(0) of fiber based heralded single photon sources (HSPSs). By optimizing the pump level, we realized a 1.5?m fiber based HSPS with a preparation efficiency of 80% @ g(2)(0)=0.06, which is the best reported performance of fiber based HSPSs in the wavelength band of optical communication. We also realized two independent HSPSs in one piece of fibers and realized HOM interference between their output photons. The fringe visibility is close to 80%, showing the potential of the fiber based HSPSs on quantum information applications. Based on above results, we developed the prototype equipment of 1.5 ?m fiber based HSPS, supporting high pump rate (>1GHz) and high single photon generation rate (>50MHz).

We proposed two new schemes to realize polarization entangled photon-pair generation in optical fibers and a scheme for state modulation of the polarization entangled photon-pairs generated in optical fibers through controlling the polarization state of pump light. We also proposed a novel scheme for purification and distribution of the polarization entangled photon-pairs generated in optical fibers theoretically. Based on these, we developed prototype equipment of 1.5 ?m fiber based polarization entangled photon pair source utilizing an all polarization maintaining scheme, showing a high two-photon interference fringe visibility (>0.92) and a two-photon state fidelity (0.95).

At present, the developed prototype equipments have been tested and applied in several research teams of quantum information in China.

To develop silicon on-chip integrated quantum light sources, we proposed a novel thin wall supporting silicon waveguide and demonstrated its characteristic of single polarization transmission. Utilizing correlated silicon waveguides fabricated by ourselves, we realized correlated photon-pair generation under pulsed pump. Correlated photon-pair generation under CW pump was also realized in silicon micro-ring cavities with ultra-low noise under room temperature and the quantum interference of the generated correlated two-photon state was demonstrated, showing its great potential in quantum information applications.

Representative Result 8-
Hollow core Bragg fibers

Bragg fiber is a kind of photonic crystal fiber (PCF) with a cladding of 1D photonic crystal and guide light by the photonic band gap. They are made of semiconductor glass and polymer materials, which support light guiding at mid-infrared band. They can be fabricated by the preform drawing method, which supports continuous fabrication process. In our opinion, they are the most different fiber structure with traditional optical fibers and have great potential on breaking the performance limit of traditional fibers and leading to new applications of PCFs.

We started the research of mid-infrared hollow core Bragg fiber in 2007, aim at its bio-sensing and environment sensing applications. We established a fabrication and processing platform for semiconductor/polymer hollow core Bragg fibers, produced the first semiconductor/polymer hollow core Bragg fiber sample in China. Transmission loss of the Bragg fiber samples at 10.6?m (for CO2 laser transmission) and 3.3?m (for methane gas sensing) are lower than 2.5dB/m and 4dB/m, respectively.

We proposed and demonstrated that the hollow core Bragg fiber can be utilized as the gas cell for trace gas sensing to improve the detection sensitivity. Based on FTIR (fourier transform infrared spectroscopy), we achieved a detection limit of 8.59ppm for CH4 using a piece of hollow core Bragg fiber with a length of 1.87m. Furthermore, we proposed and fabricated a novel hollow core Bragg fiber structure with complex Bragg layers, which supports multi-wavelength transmission and realized simultaneous sensing of CH4 and CO gas.

Recently, we applied the fabrication technique of hollow core Bragg fiber on developing THz waveguide, realizing a thin wall PMMA pipe and showing its multi-mode low loss transmission characteristics at 3.1THz. Then, we proposed and fabricated a novel self-supporting anti-resonance THz waveguide with a thin wall thickness of 0.02mm. Experiment showed that it supports broad band single mode transmission within THz band with low transmission loss. This work is reported by Laser Focus World (Nov. 2013) in its News Breaks as the first single mode transmission anti-resonance THz waveguide design.

 

Honors And Awards

[1] “Merit Award” (Individual Award), Second Class, NEC Corporration, (20003) for the contributions on developing low cost LD fabrication technology

[2] “Merit Award” (Individual Award), First Class, NEC Corporration, (1997) for the contributions on the development of PC-LDs.

[3] Outstanding Thesis Award, (Individual Award), Tsinghua University   a) (1994)

 

Academic Achievement

Optical Devices with Nanostructure:

[1] Dengke Zhang, Xue Feng, Kaiyu Cui, Fang Liu, and Yidong Huang, “Identifying Orbital Angular Momentum of Vectorial Vortices with Pancharatnam Phase and Stokes Parameters”, Scientific Reports, 5, 11982, 2015.
[2] Shuai Dong, Lingjie Yu, Wei Zhang, Junjie Wu, Weijun Zhang, Lixing You, and  Yidong Huang, "Generation of hyper-entanglement in polarization/energy-time and discrete-frequency/energy-time in optical fibers", Scientific Reports, 5, 9195, 2015.
[3] Yu Wang, Xue Feng, Dengke Zhang, Peng Zhao, Xiangdong Li, Kaiyu Cui, Fang Liu, and Yidong Huang, ”Generating optical superimposed vortex beam with tunable orbital angular momentum using integrated devices“, Scientific Reports, 7, 10958, 2015.
[4] Yunxiang Li, Fang Liu, Yu Ye, Weisi Meng, Kaiyu Cui, Xue Feng, Wei Zhang, and Yidong Huang, “Two-surface-plasmon-polariton-absorption based lithography using 400 nm femtosecond laser,” Applied Physics Letters, 104(8), 081115, 2014.
[5] Hong Zhang, Xue Feng, Boxun Li, Yu Wang, Kaiyu Cui, Fang Liu, Weibei Dou, and Yidong Huang, “Integrated photonic reservoir computing based on hierarchical time-multiplexing structure,” Optics Express, 22(25), 31356–31370, 2014.
[6] Yongzhuo Li, Kaiyu Cui, Xue Feng, Yidong Huang, Fang Liu, and Wei Zhang, “Ultralow Propagation Loss Slot-Waveguide in High Absorption Active Material,” IEEE Photonics Journal, 6(3), 2200606, 2014.
[7] Zhilei Huang, Kaiyu Cui, Yongzhuo Li, Xue Feng, Yidong Huang, Fang Liu, and Wei Zhang, “Strong Optomechanical Coupling in a Nanobeam Cavity based on Hetero Optomechanical Crystals,” CLEO, JTh2A.55, San Jose, California United States, June 8-13, 2014
[8] Yunxiang Li, Fang Liu, Long Xiao, Kaiyu Cui, Xue Feng, Wei Zhang, and Yidong Huang, “Two-surface-plasmon-polariton-absorption based nanolithography,” Applied Physics Letters, 102(6), 063113, 2013.
[9] Boyu Fan, Fang Liu, Xiaoyan Wang, Yunxiang Li, Kaiyu Cui, Xue Feng, and Yidong Huang, “Integrated sensor for ultra-thin layer sensing based on hybrid coupler with short-range surface plasmon polariton and dielectric waveguide,” Applied Physics Letters, 102(6), 061109, 2013.
[10] Qi Xu, Fang Liu, Yuxiang Li, Kaiyu Cui, Xue Feng, Wei Zhang, and Yidong Huang, “Broadband light absorption enhancement in dye-sensitized solar cells with Au-Ag alloy popcorn nanoparticles,” Scientific Reports, 3, 2112, 2013.
[11] Hai Yan, Xue Feng, Dengke Zhang, Kaiyu Cui, Fang Liu, and Yidong Huang, “Compact Optical Add-Drop Multiplexers with Parent-Sub Ring Resonators on SOI Substrates,” IEEE Photonics Technology Letters, 25(15), 1462-1465, 2013.
[12] Kaiyu Cui, Qiang Zhao, Xue Feng , Yidong Huang , Yongzhuo Li , Da Wang , and Wei Zhang, “Thermo-optic switch based on transmission-dip shifting in a double-slot photonic crystal waveguide,” Applied Physics Letters, 100(20), 201102, 2012.
[13] Kaiyu Cui, Xue Feng, Yidong Huang, Qiang Zhao, Zhilei Huang, and Wei Zhang, “Broadband switching functionality based on defect mode coupling in W2 photonic crystal waveguide,” Applied Physics Letters, 101(15), 151110, 2012.
[14] Di Qu, Fang Liu, Jiafan Yu, Wanlu Xie, Qi Xu, Xiangdong Li, and Yidong Huang, “Plasmonic core-shell gold nanoparticle enhanced optical absorption inphotovoltaic devices,” Applied Physics Letters, 98(11), 113119, 2011.
[15] Jierong Cheng, Wei Zhang, Qiang Zhou, Yu Wang, Yidong Huang, and Jiangde Peng, “Single polarization transmission in pedestal-supported silicon waveguides,” Optics Letters, 36(10), 1797-1799, 2011
[16] Ruiyuan Wan, Fang Liu, Yidong Huang, Shuai Hu, Boyu Fan, Miura Yoshikatsu, Ohnishi Dai, Yunxiang Li, He Li, and Yang Xia, “Excitation of short range surface plasmon polariton mode based on integrated hybrid coupler,” Applied Physics Letters, 97(14), 141105-141103, 2010.
[17] Ruiyuan Wan, Fang Liu, and Yidong Huang, “Ultrathin layer sensing based on hybrid coupler with short-range surface plasmon polariton and dielectric waveguide,” Optics Letters, 35(2), 244-246, 2010.
[18] Kaiyu Cui, Yidong Huang, Gengyan Zhang, Yongzhuo Li, Xuan Tang, Xiaoyu Mao, Qiang Zhao, Wei Zhang, and Jiangde Peng, “Temperature dependence of mini-stop band in double-slots photonic crystal waveguides,” Applied Physics Letters, 95(19), 191901-191903, 2009.
[19] Xiaoyu Mao, Yidong Huang, Wei Zhang, and Jiangde Peng, “Coupling betweeneven- and odd-like modes in a single asymmetric photonic crystal waveguide,” Applied Physics Letters, 95(18), 183106, 2009.
[20] Fang Liu, Ruiyuan Wan, Yidong Huang, and Jiangde Peng, “Refractive index dependence of the coupling characteristics between long-range surface-plasmon-polariton and dielectric waveguide modes,” Optics Letters, 34(17), 2697-2699, 2009.
[21] Xuan Tang, Yidong Huang, Yin Wang, Keyong Chen, Wei Zhang, and Jiangde Peng, “Tunable surface plasmons for emission enhancement of silicon nanocrystals using Ag-poor cermet layer,” Applied Physics Letters, 92(25), 251116-1-3, 2008.
[22] Kaiyu Cui, Yidong Huang, Wei Zhang, and Jiangde Peng, “Modified gain and mode characteristics in two-dimension photonic crystal waveguide with microcavity structure,” IEEE Journal of Lightwave Technology, 26(11), 1492-1497, 2008.
[23] Fang Liu, Yi Rao, Yidong Huang, Wei Zhang, and Jiangde Peng, “Coupling Between Long Range Surface Plasmon Polariton Mode and Dielectric Waveguide Mode,” Applied Physics Letters, 90(14), 141101, 2007.
[24] Fang Liu, Yidong Huang, Dai Ohnishi, Wei Zhang, and Jiangde Peng, “Hybrid three-arm coupler with long range surface plasmon polariton and dielectric waveguides,” Applied Physics Letters, 90(24), 241120, 2007.

Optical Devices for Optical Fiber Communication:

[25]  Y.Huang, K. Sato, T. Okuda, N. Suzuki, S. Ae, Y. Muroya, K. Mori, T. Sasaki, and K. Kobayashi, "Low-chirp and external optical feedback resistant characteristics in ?/8 phase-shifted DFB-LDs under direct modulation", IEEE J. Quantum Electron. vol. 35, no. 11, pp. 1479-1484, 2002.
[26] Y. Huang, T. Okuda, K. Sato, Y. Muroya, T. Sasaki, and K. Kobayashi, "Isolator-free 2.5-Gb/s, 80-km transmission by directly modulated ?/8 phase-shifted DFB-LDs under negative feedback effect of mirror loss", IEEE Photo. Tech. Lett., vol. 13, no. 3, pp. 245-247, 2001.
[27] Y. Huang, T. Okuda, K. Shiba, Y. Muroya, N. Suzuki, and K. Kobayashi, "External optical feedback resistant 2.5-Gb/s transmission of partially corrugated waveguide laser diodes over a -40 to 80 C temperature range", IEEE Photo. Tech. Lett., vol. 11, no. 11, pp. 1482-1484, 1999.
[28] Y. Huang, T. Okuda, K. Shiba, and T. Torikai, "High-yield external optical feedback resistant partially-corrugated-waveguide laser diodes", IEEE J. Quantum Electron., vol. 5, no. 3, pp. 435-441, 1999.
[29] K. Shiba, T. Okuda, Y. Huang, H. Yamada, and T. Torikai, "External optical feedback resistant 622-Mb/s modulation of partially-corrugated-waveguide laser diodes over -40 to +85C", IEEE Photo. Tech. Lett., vol. 10, pp.872-874, 1998.
[30]  Y. Huang, H. Yamada, T. Okuda, T. Torikai, and T. Uji, "External optical feedback resistant characteristics in partially-corrugated-waveguide laser diodes", Electron. Lett., vol. 32, no. 11, pp. 1008-1009, 1996.
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