电子工程系

Department of Electronic Engineering 

 

Yi LUO, Ph.D. Professor

Ph. D., Professor of Electronic Engineering, Tsinghua University, Beijing
Vice Director of Tsinghua National Laboratory of Information Science and Technology
Oversea Editor of Japanese Journal of Applied Physics
Oversea Editor of Applied Physics Express
Program committee member of ECOC (European Conference on Optical Communication)

 

Education background

Mar.1990    Ph.D. degree, Dept. of Electronic Engineering, The University of Tokyo,Tokyo, Japan, Dissertation: “Studies on Gain-Coupled DFB Semiconductor Lasers.”
Advisor: Prof. Kunio Tada.
During his doctoral course, systematic studies on gain-coupled distributed feedback semiconductor lasers were carried out for the first time by Dr. LUO. He proposed and fabricated two kinds of gain-coupled distributed feedback semiconductor lasers with loss grating and gain grating using LPE and MOVPE, respectively.

Mar.1987    M.S. degree, Dept. of Electronic Engineering, The University of Tokyo, Japan. Thesis: “Studies on the Gratings Used in DFB Semiconductor Lasers.”
Advisor: Prof. Kunio Tada.
During that time, he made many experiences in the field of grating fabrication, dry etching and LPE epitaxy.

Mar.1983   B.S. degree, Div. of Physical Electronics, Dept. of Electronic Engineering, Tsinghua University. Major: Microwave Devices.

Experience

Dec.1992-now
Full Professor, Dept. of Electronic Engineering, Tsinghua University, Beijing, P. R. China.

April 1992 -Dec. 1992
Lecturer, Dept. of Electronic Engineering, Tsinghua University, Beijing, P. R. China.

April 1990 -Mar. 1992    
Member of Research staff, Optical Measurement Technology Development Co., Ltd., Musashino-shi, Tokyo 180, Japan.

Concurrent Academic

Associate Editor of IEEE Journal of Quantum Electronics (1996-1998)
Associate Editor of Japanese Journal of Applied Physics
Associate Editor of Journal of Lightwave Technology
Program committee member of ECOC (European Conference on Optical Communication)

Areas of Research Interests/ Research Projects

He has a long-term research focus on basic theory of semiconductor optoelectronic devices, fabrication technology, application technology development and training. He has obtained many outstanding contributions in optoelectronic devices to support broadband fiber optic network and semiconductor lighting technology.

Honors And Awards

Two national technology invention prize two (ranked 1), one national science and technology progress Award (ranked 2), three provincial-level award (ranked 1)

Academic Achievement

141 SCI indexed papers Published; 2192 times cited (including 860 times SCI cited) by other researchers; cited by 11 foreign academic books; 12 invent patents as the first inventor, and 7 patents transferred.
1. X. L. Mao, H. T. Li, Y. J. Han, and Y. Luo, Two-step design method for highly compact three-dimensional freeform optical system for LED surface light source, Optics Express, 22(106) (2014), A1491-A1506.
2. Y. J. Chen, Yijing, V. Krishnamurthy, Y. C. Lai, Y. Luo, Z. B. Hao, L. Wang, and S. T. Ho, Fabrication of sub-200 nm AlN-GaN-AlN waveguide with cleaved end facet, Journal of Vacuum Science & Technology B, 32(4) (2014), 041207.
3. L. Niu, Z. B. Hao, Y. X. E, J. N. Hu, L. Wang, and Y. Luo, MBE-grown AlN-on-Si with improved crystalline quality by using silicon-on-insulator substrates, Applied Physics Express, 7(6) (2014), 065505.
4. K. Wu, T. B. Wei, H. Y. Zheng, D. Lan, X. C. Wei, Q. Hu, H. X. Lu, J.X. Wang, Y. Luo, and J. M. Li, Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography, Journal of Applied Physics, 115(12) (2014), 123101.
5. D. Liu, C. Z. Sun, B. Xiong, and Y. Luo, Nonlinear dynamics in integrated coupled DFB lasers with ultra-short delay, Optics express, 22(5) (2014), 5614-5622.
6. X. L. Mao, H. T. Li, Y. J. Han, and Y. Luo, A two-step design method for high compact rotationally symmetric optical system for LED surface light source, Optics Express, 22(102) (2014), A233-A247.
7. K. Wu, T. B. Wei, D. Lan, H. Y. Zheng, J. X. Wang, Y. Luo, and J. M. Li, Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography, Chinese Physics B, 23(2) (2014), 028504.
8. W. B. Lv, L. Wang, L. Wang, Y. C. Xing, D. Yang, Z. B. Hao, and Y. Luo, InGaN quantum dot green light-emitting diodes with negligible blue shift of electroluminescence peak wavelength, Applied Physics Express, 7(2) (2014), 025203.
9. K. Wu, T. B. Wei, D. Lan, X. C. Wei, H. Y. Zheng, Y. Chen, H. X. Lu, K. Huang, J. X. Wang, Y. Luo, and J. M. Li, Phosphor-free nanopyramid white light-emitting diodes grown on {10 1ˉ 1} planes using nanospherical-lens photolithography, Applied Physics Letters, 103(24) (2013), 241107.
10. X. N. Zhao, B. Xiong, C. Z. Sun, and Y. Luo, Low drive voltage optical phase modulator with novel InGaAlAs/ InAlAs multiple-quantum-barrier based n-i-n heterostructure, Optics express, 21(21) (2013), 24894-24903.
11. K. Wu, Y. Y. Zhang, T. B. Wei, B. Sun, H. Y. Zheng, H. X. Lu, Y. Chen, J. X. Wang, Y. Luo, and J. M. Li, Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography, Aip Advances, 3(9)(2013), 092124.
12. K. Wang, Y. J. Han, H. Li, and Y. Luo, Overlapping-based optical freeform surface construction for extended lighting source, Optics express, 21(17) (2013), 19750-19761.
13. W. B. Lv, L. Wang, J. X. Wang, Y. C. Xing, J. Y. Zheng, D. Yang, Z. B. Hao, and Y. Luo, Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method, Japanese Journal of Applied Physics, 52(8S) (2013), 08JG13.
14. J. N. Hu, Z. B. Hao, L. Niu, Y. X. E, L. Wang, and Y. Luo, Atomically smooth and homogeneously N-polar AlN film grown on silicon by alumination of Si3N4, Applied Physics Letters, 102(14) (2013), 141913.
15. H. T. Li, X. L. Mao, Y. J. Han, and Y. Luo, Wavelength Dependence of Colorimetric Properties of Lighting Sources Based on Multi-Color LEDs, Optics Express, 21(3)(2013), 3775-3783.
16. D. Liu, C. Z. Sun, B. Xiong and Y. Luo, Suppression of Chaos in Integrated Twin DFB Lasers for Millimeter-Wave Generation, Optics Express, 21(2)(2013), 2444-2451.
17. T. Shi, B. Xiong, C. Z. Sun, and Y. Luo, Back-to-Back UTC-PDs With High Responsivity, High Saturation Current and Wide Bandwidth, IEEE Photonics Technology Letters, 25(2)(2013), 136-139.
18. H. T. Li, S. C. Chen, Y. J. Han, and Y. Luo, A Fast Feedback Method to Design Easy-Molding Freeform Optical System with Uniform Illuminance and High Light Control Efficiency, Optics Express, 21(1)(2013), 1258-1269.
19. Z. B. Guo, L. Wang, Z. B. Hao, and Y. Luo, Modeling and experimental study on sensing response of an AlGaN/GaN HEMT-based hydrogen sensor, Sensors and Actuators B: Chemical, 176(2013), 241-247.
20. W. B. Lv, L. Wang, J. X. Wang, Z. B. Hao, and Y. Luo, InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers, Nanoscale research letters, 7(1) (2012), 1-8.
21. K. Y. Qian, J. Ma, W. Fu, and Y. Luo, Research on scattering properties of phosphor for high power white light emitting diode based on Mie scattering theory, Acta Physica Sinica, 61(20) (2012), 204201.
22. 钱可元,马骏,付伟,罗毅,基于Mie散射理论的白光发光二极管荧光粉散射特性研究,物理学报,61(20)(2012),204201.
23. J. Y. Zheng, L. Wang, Z. B. Hao, and Y. Luo, L. X. Wang, and X. K. Chen, A GaN p-i-p-i-n Ultraviolet Avalanche Photodiode, Chinese Physics Letters, 29(9)(2012), 097804.
24. J. X. Wang, L. Wang, L. Wang, Z. B. Hao, and Y. Luo, A. Dempewolf, M. Muller, F. Bertram And J. Christen, An Improved Carrier Rate Model to Evaluate Internal Quantum Efficiency and Analyze Efficiency Droop Origin of InGaN Based Light-Emitting diodes, Journal of Applied Physics, 112(2)(2012), 023107.
25. W. Zhao, L. Wang, J. X. Wang, W. B. Lv, Z. B. Hao, and Y. Luo, Growth and Characterization of Self-assembled Low-indium Composition InGaN Nanodots by Alternate Admittance of Precursors, Physica Status Solidi A-Applications and Materials Science, 209(6)(2012), 1096-1100.
26. Y. B., Hu, Z. B. Hao, J. N. Hu, L. Niu, L. Wang, and Y. Luo, Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy, Acta Physica Sinica, 61(23)(2012), 237804.
27. 胡懿彬,郝智彪,胡健楠,钮浪,汪莱,罗毅,分子束外延生长InGaN/AlN量子点的组分研究,物理学报,61(23)(2012),237804.
28. L. Niu, Z. B. Hao, J. N. Hu, Y. B. Hu, L. Wang, and Y. Luo, Improving the Emission Efficiency of MBE-Grown GaN/AlN QDs by Strain Control, Nanoscale Research Letters, 6(2011), 611.
29. W. B. Lv, L. Wang, J. X. Wang, Z. B. Hao, and Y. Luo, Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers, Chinese Physics Letters, 28(12)(2011), 128101
30. J. X. Wang, L. Wang, Z. B. Hao, and Y. Luo, Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED, Chinese Physics Letters, 28(11)(2011), 118105
31. D. J. Hao, K. Y. Qian, and Y. Luo, Use of Adjusted Molecular Dynamics Method for Dot Pattern Design in Large Scale Light-Emitting Diode Edge-Lit Backlight Unit, Optical Engineering, 50(10)(2011), 104001.
32. W. C. Situ, Y. J. Han, H. T.Li, and Y. Luo, Combined Feedback Method for Designing a Free-Form Optical System with Complicated Illumination Patterns for an Extended LED Source, Optics Express, 19(S5)(2011), A1022-A1030.
33. S. Q. Li, L. Wang, Y. J. Han, Y. Luo, H. Q. Deng, J. S. Qiu, and J. Zhang, A new growth method of roughed p-GaN in GaN-based light emitting diodes, Acta Physica Sinica, 60(9)(2011), 098107.
34. 李水清,汪莱,韩彦军,罗毅,邓和清,丘建生,张洁,氮化镓基发光二极管结构中粗化p型氮化镓层的新型生长方法,物理学报,60(9)(2011),098107.
35. T. Shi, B. Xiong, C. Z. Sun, and Y. Luo, Study on The Saturation Characteristics of High-Speed Uni-Traveling-Carrier Photodiodes Based on Field Screening Analysis, Chinese Optics Letters, 9(8)(2011), 082302.
36. W. Zhao, L. Wang, J. X. Wang, Z. B. Hao, and Y. Luo, Theoretical Study on Critical Thicknesses of InGaN Grown on (0001) GaN, Journal of Crystal Growth, 327(1)(2011), 202-204.
37. W. Zhao, L. Wang, J. X. Wang, and Y. Luo, Luminescence Properties of InxGa1?xN (x~0.04) Films Grown by Metal Organic Vapour Phase Epitaxy, Chinese Physics B, 20(7)(2011), 076101.
38. W. Zhao, L. Wang, J. X. Wang, Z. B. Hao, and Y. Luo, Edge Dislocation Induced Self-Assembly of InGaN Nano-Flower on GaN by Metal Organic Vapor Phase Epitaxy, Journal of Applied Physics, 110(1)(2011), 014311.
39. W. Zhao, L. Wang, W. B. Lv, L. Wang, J. X. Wang, Z. B. Hao, and Y. Luo, Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method, Japanese Journal of Applied Physics, 50(6)(2011), 065601
40. L. Wang, W. Zhao, Z. Hao, and Y. Luo, Photocatalysis of InGaN Nanodots Responsive to Visible Light, Chinese Physics Letters, 28(5)(2011), 057301.
41. J. Wang, Y. C. Xing, and Y. Luo, Ab Initio Study of GaN Periodically Substituted by Transition Metal for Intermediate Band Materials. Physics Status Solidi B, 248(4)(2011), 964-968.
42. L. L. Cao, Y. J. Han, Z. X. Feng, and Y. Luo, Reflector Design for Large-Size Spherical Surface Sources, Optical Engineering, 50(2)(2011), 023001.
43. W. J. Fan, Z. B. Hao, E. Stock, J. B. Kang, Y. Luo, and D. Bimberg, Comparision between Two Types of Photonic-crystal Cavities for Single Photon Emitters, Semiconductor Science and Technology, 26(1)(2011), 014014.
44. J. X. Wang, L. Wang, W. Zhao, Z. B. Hao, and Y. Luo, Understanding Efficiency Droop Effect in InGaN/GaN Multiple-Quantum-Well Blue Light-Emitting Diodes with Different Degree of Carrier Localization, Applied Physics Letters, 97(20)(2010), 201112.
45. L. Wang, L. Wang, F. Ren, W. Zhao, J. X. Wang, J. N. Hu, C. Zhang, Z. B. Hao, and Y. Luo, GaN grown on AlN/sapphire templates, Acta Physica Sinica, 59(11)( 2010), 8021-8025.
46. 汪莱,王磊,任凡,赵维,王嘉星,胡健楠,张辰,郝智彪,罗毅,AIN/蓝宝石模板上生长的GaN研究,物理学报,59(11)(2010),8021-8025.
47. F. Ren, Z. B. Hao, J. N. Hu, C. Zhang, and Y. Luo, Effects of AlN Nucleation Layer Thickness on Crystal Quality of AlN Grown by Plasma-Assisted Molecular Beam Epitaxy, Chinese Physics B, 19(11)(2010), 116801.
48. Z. X. Feng, Y. Luo, and Y. J. Han, Design of LED Freeform Optical System for Road Lighting with High Luminance/Illuminance Ratio, Optics Express, 18(21)(2010), 22020-22031.
49. H. Yuan, C. Z. Sun, J. M. Xu, Q. Wu, B. Xiong, and Y. Luo, Design and fabrication of multilayer antireflection coating for optoelectronic devices by plasma enhanced chemical vapor deposition, Acta Physica Sinica, 59(10)(2010), 7239-7244
50. 袁贺,孙长征,徐建明,武庆,熊兵,罗毅,基于等离子体增强化学气相沉积技术的光电子器件多层抗反膜的设计和制作,物理学报,59(10)(2010),7239-7244
51. L. Wang, J. Wang, W. Zhao, X. Zou, and Y. Luo, Effects of InGaN Barriers with Low Indium Content on Internal Quantum Efficiency of Blue InGaN Multiple Quantum Wells, Chinese Physics B, 19(7)(2010), 076803.
52. F. Ren, Z. B. Hao, C. Zhang, J. N. Hu, and Y. Luo, High Quality AlN with Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy, Chinese Physics letters, 27(6)(2010), 068101.
53. W. J. Fan, Z. B. Hao, Z. Li, Y. S. Zhao, and Y. Luo. Influence of Fabrication Error on the Characteristics of a 2D Photonic-Crystal Cavity. IEEE Journal of Lightwave Technology, 28(10)(2010), 1455-1458.
54. C. Zhang, Z. B. Hao, F. Ren, J. N. Hu, and Y. Luo, Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy, Chinese Physics letters, 27(5)(2010), 058101.
55. Y. Luo, Z. X. Feng, Y. J. Han, and H. T. Li, Design of Compact and Smooth Free-Form Optical System with Uniform Illuminance for LED Source, Optics Express, 18(9)(2010), 9055-9063.
56. J. X. Wang, L. Wang, W. Zhao, X. Zou, and Y. Luo, Study on Internal Quantum Efficiency of Blue InGaN Multiple-Quantum-Well with an InGaN Underneath Layer, Science In China Series E-Technological Sciences, 53(2)(2010), 306-308.
57. F. Ren, Z. B. Hao, L. Wang, L. Wang, H. T. Li, and Y. Luo, Effects of SiNx on Two-Dimensional Electron Gas and Current Collapse of AlGaN/GaN High Electron Mobility Transistors, Chinese Physics B, 19(1)(2010), 017306.